Abstract
The research results of photoelectric, optical and recombination properties of neutron transmutation doped (NTD) semiconductor solid alloys Si 1-x Ge x(x = 0.008–0.112) are presented in spectral range 0.8–10.6 μm. It is shown that these properties of NTD Si 1-x Ge x are determined by creation of transmutation impurities of Se and Ga as well as by variation of Ge content and compensation. The theoretical and applied aspects of the NTD Si 1-x Ge x have been also considered.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
