Abstract
The impact of program/erase (P/E) cycling on drain disturb in 65 nm-node NOR flash memories is studied. It is shown that the drain disturb is originated from the hot-hole-injection (HHI) induced by band-to-band tunneling (BBT) when programming operation. The drain disturb becomes more severe as cycles increase due to the negative traps and interface generated during cycling in the tunneling oxide. The 1/f noise before and after drain disturb for fresh and cycled cells are investigated to support the conclusions.
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