Abstract
The interaction between dislocations and oxygen atoms in silicon has been studied. The effect of immobilization of dislocations by the segregation of oxygen to the dislocation core (dislocation locking) has been investigated for different oxygen concentrations and annealing conditions. It has been revealed that oxygen locking of dislocations shows three different regimes of behaviour. A numerical model for the dislocation locking process of oxygen atoms has been presented and used to interpret the experimental results.
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