Abstract
Under an inversion bias and in response to a linear voltage sweep, the capacitance voltage (C-V) and current-voltage (C-V) characteristics of metal-insulator-semiconductor (MIS) capacitors are described and discussed. An improved model for the generation width is applied, in which the effect of inversion minority carriers on the minority quasi-Fermi level has been taken into account. A differential equation is developed with which to describe the change of the depletion region under the linear voltage sweep. The high-frequency MIS capacitance and gate current are related to the depletion region width. In this way the non-equilibrium characteristics of linear-sweep MIS capacitors are described.
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