Abstract
Abstract We have experimentally investigated a large number of InP Transferred Electron Devices ranging from 1 to 2 microns in thickness, and have numerically simulated their behavior using both a drift and diffusion model and a Boltzmann transport equation approach. We were able to fit the static I(V) curves and threshold conditions rather well by a proper choice of ideality factor, n, in the control characteristic, which we assumed to be that of a Schottky diode.
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