Abstract
AbstractThe investigation of metal contact properties of thermal annealed PECVD n‐type SiC thin films for micro‐electromechanical system (MEMS) is reported. The PECVD SiC films were annealed at 1200 °C during 2 hours to obtain poly 3C‐SiC, which is evidenced by the presence of (111) plane of 3C–SiC crystalline phase in the X‐ray diffraction (XRD) pattern and by strong and narrow Lorentzian SiC stretching peak in the FTIR spectra. Hall Effect measurements at room temperature demonstrate that these annealed phosphorus doped films are n‐type semiconductor with donor concentration of 6 × 1019 cm–3. The studied metals were titanium, aluminum and nickel. The metal to poly‐SiC contact were studied using the TLM technique. The three metals exhibited excellent I‐V linearly and showed ohmic characteristics at room temperature. In the best case, a specific resistance of 6 × 10–4 Ωcm2 was obtained for nickel contacts. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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