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Abstract
With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Based on orthogonal test table L18 (35), the effects of process parameters included water partial pressure, work pressure, substrate temperature, oxygen flow rate and sputtering power, on the optoelectronics properties of ITO thin films were investigated in detail(systematically). Calibration of sheet resistance transmittance, atomic force microscope, and X-ray diffraction were employed to characterize the ITO films.
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