A study of irradiation damage in commercial power MOSFETs by means of split C-V and conventional methods

Abstract

Charge build-up and generation of interface states are the most important degradation factors in metal-oxide-semiconductor devices. Traditional methods to determine the radiation hardness of MOS structures require destructive testing. In this study we performed tests for commercial power MOSFET characterization by means of generally adopted methods like charge pumping (CP), I-V and split C-V techniques. Results of measurements confirm theoretical expectations but some unexpected effects also occurred.