Abstract
Deep‐ and shallow‐level defects in liquid phase epitaxial have been detected and characterized by transient capacitance, Hall transport, and photoluminescence measurements. The background impurity levels in the undoped crystals were varied by varying the period of prebaking of the In melt. A single deep electron trap with activation energy is present dominantly with a concentration almost three orders lower than the background carrier concentration in the layers. From electron capture measurements, the electron capture cross section is found to obey the law . The consistency of its concentration, irrespective of the purity of the crystal, and its removal after short‐term heat‐treatment leads us to believe that the trap is related to native defects. A hole trap with an activation energy of 0.22 eV was detected in some samples at low temperatures.
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