Abstract
The adsorption of hydrogen on a silicon surface plays an important role in the reconstruction of the surface structure and terminations of the dangling bonds of the surface atoms. Hydrogen adsorption experiments on Si(100) and Si(111) surfaces were perfomed using the electron stimulated desorption spectroscopy (TOF-ESD) combined with the thermal desorption spectroscopy (TDS). The H + signal intensity of TOF-ESD was observed on Si(100) but not Si(111) after hydrogen exposure in spite of observing hydrogen desorptions from both surfaces in TDS.
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