Abstract
The nascent field of spintronics has great potential to enable new types of information processing and storage devices and supplement conventional semiconductor devices. We report a study of nanoscale thermal phenomena in tunnel junctions, which are one of the key building blocks of spintronic devices. Measurements of the thermal resistance of tunnel barrier materials together with theoretical prediction of heat generation rate due to tunneling current enable development of thermal models for tunnel junctions. A nanoscale heating scheme exploiting thermal interface resistance at metal-barrier interfaces is proposed with possible applications in thermally assisted switching of magnetic random access memory (MRAM).
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