Abstract
The very low pressure adsorption kinetics of H 2S on the clean and oxygen covered Cu(110) face have been examined by Auger Electron Spectroscopy (AES) and Mirror Electron Microscopy (MEM, used for continuous surface potential variations of the copper surface). The AES experimental curves on the clean copper face have been interpreted using a model of island growth by surface diffusion. The presence of an adsorbed oxygen layer on the copper surface changes notably the induction times observed on both AES and MEM measurements.
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