Abstract
The glass-forming region of the ternary GeSIn system is determined by differential thermal analysis (DTA), X-ray diffraction and electron microscope studies. The glass phases of the system have a region of maximum In content of 15 atomic percent. The experimental studies determined the transition temperature T g, the density d, the microhardness H and the refraction index n. An interpretation of the results from a chemical bond point of view has been made. The resistivity ϱ (2.0 + 7.5 × 10 14) ω cm has also been measured and a switching effect has been observed. These physical and electrical studies have been carried out with regard to the practical applications of the formed glasses of the GeSIn system.
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