Abstract
GaN thin films are grown on Si-terminated (0001) 6H-SiC substrates pre-treated with SiH4 in a metal organic chemical vapor deposition system. The influence of the SiH4 pre-treatment conditions on the SiC surface is carefully investigated. It is found that SiH4 could react with the SiC surface oxide, which will change the surface termination. Moreover, our experiments demonstrate that SiH4 pre-treatment can distinctly influence the AlGaN nucleation layer and the basic characteristics of GaN.
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