Abstract
In this study, We demonstrate mono and few layers MoS2 samples on the SiO2(270nm)/Si substrate from bulk MoS2 crystal by micromechanical exfoliation technique. We have systematically studied Atomic Force Microscopy, Raman and PL properties of mono and few layer MoS2 on the SiO2(270nm)/Si substrate. First, we find that the number of layer values dependent the Raman and PL emission. First, Raman intensity area ratio of the MoS2E12g, A1g and 2LA modes to that area of the Si substrate increased linear with increasing number of layers MoS2. Second, Normalized PL intensity area of the (A) peak decreased linear with increasing number of layers MoS2. The value of those graphs is a method to understand the number of layers the exfoliated MoS2.
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