Abstract
The relationship of structural defects to the electrical properties of semiconductor materials is discussed. Etch pit density (EPD) measurements are normally used to evaluate dislocation density. A nondestructive, quantitative method for evaluation of substrate defect populations is needed for quality assurance. In this study, double crystal x-ray diffraction rocking curves are investigated for this purpose. Rocking curve widths are determined experimentally for a set of GaAs substrated with a range of EPD. The experimentally determined values are also compared with those calculated from simulated rocking curves based on x-ray diffraction theory. Limited correlation between rocking curve widths and EPD is observed.
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