Abstract
In this study we analyzed the envelope functions obtained by solving the effective-mass Schrodinger equation including the non-parabolicity of the valence band in p-type FD-SOI devices. In order to carry out this task, we used two different algorithms to solve the effective-mass Schrodinger equation in barriers, and calculated the envelope functions and eigenenergies yielded by these methods for several states along the subbands. This study enabled us to propose a method for selecting the most appropriate envelope functions for each subband. Finally, we quantified the differences in phonon and interface-roughness scattering rates resulting from using the envelope function proposed rather than that obtained by simpler approaches in barriers.
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