Abstract
Double sided polishing process has become a main machining method for silicon wafer finishing process, but it is difficult to get ultra-smooth surface with the very stringent machining conditions. In this paper, the mechanism of ultra-smooth surface machining process was studied, the main parameters affecting the surface quality of silicon wafer, such as the polishing pad and carrier rotation speed, polishing press, polishing slurries etc. , were discussed and optimized, then ultra-smooth surface of silicon wafer with Ra 0.4nm has been obtained based on the above study. A new double sided polishing machine with computer control system equipped with a digital controlled press valve was developed, and the ultra-smooth machining process of silicon wafer was established in this paper.
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