Abstract
AbstractA study of the contribution of dislocations to the zero‐bias resistance–area product (R0A) of long‐wavelength infrared n‐on‐p mercury cadmium telluride (HgCdTe) diodes has been carried out from the modelling of the temperature dependence of R0A product of diodes fabricated in a material of known dislocation density. The capture probabilities of electrons and holes relevant to the modelling of the effect of dislocations in p‐type HgCdTe have been thus evaluated. The general applicability of these parameters has been further verified by using them to model the temperature variation of the R0A of the diodes reported by other groups. Results of the present study show that dislocations degrade the impedance of HgCdTe diodes at low temperatures on account of their shunt‐resistance behavior rather than the commonly accepted dislocation‐assisted tunnelling mechanism. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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