Abstract
Deep-level defects in Li+-implanted ZnSe epilayer grown by metalorganic vapor-phase epitaxy (MOVPE) on a GaAs substrate have been characterized by using the deep-level transient spectroscopy method under different post-implantation annealing conditions. Four electron traps with energy levels of Ec−0.3, 0.33, 0.55, and 1.02 eV and one hole trap with an energy level of Ev+0.23 eV were detected. Possible physical origins and formation mechanisms for these defects were discussed using the defect model proposed by Myles and Sankey [Phys. Rev. B 29, 6810 (1984)]. The results showed that interdiffusion between the ZnSe/GaAs heterointerface plays an important role on the formation of native defects in the MOVPE-grown ZnSe epitaxial films on the GaAs substrate.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
