Abstract
Current transport in abrupt and graded p- N heterojunction diodes is studied by employing the thermionic field-diffusion model. The tunneling effect in p- N heterojunctions is treated with a numerical solution of Schrodinger's equation. We have demonstrated that the resonant tunneling effect exists in p- N heterojunctions. For comparison, different models are applied to simulate the I- V characteristics of three different p- N heterostructures. Good design of an inserted layer between the p- and N-layers is required to obtain high injection efficiency. For the AlGaAs/GaAs system, graded heterojunctions with W g > 100 Å and abrupt heterojunctions with setback layers with W i > 50 A ̊ increase the injection efficiency in accordance with the theoretical calculations.
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