Abstract
Concentration profiles of vacuum deposited Cu/Ni thin films annealed at the temperature interval 200–500°C have been investigated using Auger electron spectroscopy (AES) in combination with Ar + ion sputtering. The experimental conditions used aimed at simulating those processes of typical—packaging fabrication. The results indicate that a significant diffusion of Ni in Cu layer exceeding 12 at% level has occurred due to annealing at 500°C for 5 min, at 400°C for 20 min, at 300°C for 80 min, and at 200°C for 180 min. It is concluded that the measured Ni concentrations represent the composite result of defect-assisted diffusion into grain interiors fostered by rapid grain-boundary diffusion.
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