Abstract
This paper characterises the angular intensity distribution of MeV protons transmitted through strained Si 1−x Ge x Si bilayers close to the [0 1 1] axis. The ring-like intensity distribution produced by the front layer [0 1 1] axis when it is aligned close to the beam direction is projected either towards or away from the rotated back layer [0 1 1] axis. The resultant transmitted angular intensity distribution depends on both the bilayer tilt angle and the interface rotation angle. Previously unobserved intensity distributions through such structures are simulated using a Monte Carlo channeling code, and similar behaviour is also observed in channeling patterns recorded from thinned, strained Si 1−x Ge x Si bilayers.
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