Abstract
In this work, we performed a study of capacitance–voltage (C–V) hysteresis in HfO2/InGaAs metal-oxide-semiconductor (MOS) systems. The charge trapping density estimated from the C–V hysteresis is comparable to or even greater than the typical interface state density in high-k/InGaAs MOS systems. Based on an oxide thickness series, it is demonstrated that the magnitude of C–V hysteresis increases linearly with the increasing HfO2 thickness, with the corresponding density of trapped charge being a constant value over the range of oxide thicknesses, indicating that the charge trapping is occurring in a plane near/at the HfO2/InGaAs interfacial transition region. C–V hysteresis with a hold in accumulation was also investigated. It is observed that the C–V hysteresis has a power law dependence on the stress time in accumulation at the initial stage of stressing and tends to reach a plateau for sufficiently long stress times. Moreover, a larger gate voltage used during the stress increases the oxide field, allowing more border traps to be accessed.
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