Abstract
Dark and illuminated capacitance–voltage ( C– V) characteristics and admittance measurements were carried out on multilayer carbon structures. The latter were produced by depositing ultrathin amorphous carbon layers with different optical band gaps on a monocrystalline boron-doped silicon substrate. The carbon layers were grown either by magnetron sputtering (MS) of a graphite target in argon or by plasma ion beam deposition (IBD) in cyclohexane. The structures were characterised by X-ray reflectivity (XRR). With respect to their electrical properties, it was shown that light strongly affects both the C– V-characteristics and the admittance. The results were interpreted in terms of the energy levels in these amorphous carbon multilayer structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
