Abstract
In order to obtain a suitable ohmic contacting material for chalcopyrite Cu(In1-xGax) (Se1-ySy)2 based solar cells transparent conductive oxide indium tin oxide(ITO) (600 nm) deposited on soda lime glass, its optical and electrical properties was optimized by annealing at 400°C in the atmosphere of N2. The Al(280 nm)/Mo (20 nm), Al(155 nm)/Ni(25 nm)/Cr(15 nm) and Al(275 nm)/Ti(15 nm) metal pads deposited by e-beam onto ITO. The contact resistance between the metal pads and ITO has been studied for different annealing temperature. It has been found that Al/Mo contacting structure has lower resistance and is more suitable for solar cell technology.
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