Abstract

This work investigates the impact of deposition parameters on thin film quality of an AlCu/TiW metallization system. A statistically designed experiment was conducted to study aluminum deposition temperature, pressure, power, and underlying dielectric stress. Determination of Median Time to Failure (MTF) by electromigration stress was used to determine the optimum deposition parameters. Data on microstructure, as characterized by TEM and resistivity ratio (RR) measurements made on patterned conductors, are compared to the observed MTF's. Substrate temperature during deposition was found to have the most significant impact on electromigration. No correlation of MTF to RR measurements was observed. The improved EM performance at low temperature is believed to be due to a more uniform distribution and a larger number of (-)-Al/sub 2/Cu precipitates. >

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.