Abstract
Good agreement between calculated and measured dislocation densities for 〈112〉 edge dislocations was obtained in bent single crystals of silicon iron. A density of about 2 × 10 6 cm −2 was found for original unbent crystals. Cancellation of unlike dislocations was observed in detail during removal of a polygonization structure and also during removal of a cold-worked structure. The change in distribution of edge dislocations after bending and annealing was investigated. Observations included thermally activated slip, first rearrangements of dislocations into short-range polygon walls, and later rearrangements and combinations leading to polygon growth. Some semi-quantitative data on polygon growth wore obtained.
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