Abstract
A three-dimensional numerical method for investigating electrical and optical properties of pyramid and prism-shape AlGaN/GaN quantum dots (QDs) has been developed. The effect of QD structure parameter such as height and base area on energy levels, dipole matrix element, absorption coefficient, and third-order susceptibilities (quadratic electro-optic effect and third harmonic generation (THG) parameters) are studied. Our calculation results show the decreasing of the energy levels, resonant frequency and absorption peak, and the increasing of the quadratic electro-optic effect and THG by increasing the QD height and base area. Also with increasing the QD height and base area a red shift occurs.
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