A Study About Nanocluster Deposition of Thin-film Formation by Molecular Dynamics Simulation

Abstract

The thin-film growth has been confirmed to be assembled by an enormous number of clusters in ICBD method. In sequence of clusters’ depositions proceeds to form the thin-film to understand quantitatively the interaction mechanisms between the cluster atoms and the substrate atoms, we use molecular dynamics simulation with EAM potential. The quantitative of flatness of deposition and percent of disordered atoms were proposed to evaluate the property of thin-film. In this simulation, three different Co cluster sizes of 55, 70, and 100 atoms with different velocities (100 up to 800 m/s) were deposited on a Al(0 0 1) substrate whose temperatures were set between 300 and 500 K. The simulations begin at specific equilibrium temperature of clusters and the substrate. The simulations are performed at different temperatures of the clusters and substrate and for different sizes of clusters. We showed that the percent of disordered atoms of substrate are affected by the cluster size and velocity of the clusters. Temperature dependence of the number of disordered atoms for different cluster’s velocity was observed. We investigated the effect of cluster size and initial velocity of cluster on the value of flatness.