Abstract
AbstractUsing a semiempirical potential energy function for Si, thin amorphous films of Si have been simulated on crystalline Si by a partial melting and subsequent quenching process. After relaxation at 450°K, the dominant structural feature was a dense free surface skin with a void layer underneath for both c-Si(100) and c-Si(111) substrates and for film thicknesses up to 16Å. Tetrahedral coordination was maintained throughout the amorphous region and structural differences were noted in the α-Si/c-Si interface region for the two orientations considered.
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