Abstract
A simple partable cryostat system for studying photoconductivity in semiconductors under variable uniaxial stress at liquid helium temperatures is described. It has been used with a Fourier transform spectrometer to determine the spectral response of the photoconductivity of gallium doped germanium between 10 and 140 cm−1 as a function of stress and electric field. Details are also presented of the variation of breakdown voltage and dynamic resistance as a function of stress under low background conditions.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of Infrared and Millimeter Waves
Paper Title
Journal
Date
