Abstract
RHEED intensity oscillations observed during growth of several metals (Cu, Al, Ba, Sr, Pb) on Si(111)(7 × 7) substrates at 100 K show that the growth mechanism is layer-by-layer like. The growth behaviour, although rather complicated, follows the same pattern for all metals. Initially the oscillations are rather irregular and damped. At higher coverages the amplitude of the oscillations increases and the period becomes much more regular. This phenomenon is explained by assuming a transition from a rather imperfect substrate-matched to a relaxed bulk metal phase. This explanation is supported by diffraction data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
