Abstract
An “atomic chain-like” array distinct from interfacial misfit dislocation arrays was characterized at the interface of GaSb/GaAs grown by metalorganic chemical vapor deposition. Using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and x-ray energy-dispersive spectroscopy, we obtained the chemical composition of this structure and confirmed significant anion intermixing within the GaAsSb alloy layer at the interface. Atomic-scale HAADF-STEM imaging and geometric phase analysis revealed variations in the local strain field, indicating that the GaAsSb layer can partially relax the lattice misfit strain. Our results indicate that self-organized alloy intermixing during GaSb epilayer growth on GaAs provides strain relief.
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