Abstract
Chalcopyrite Cu(In, Ga)Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (CIGS) films were directly fabricated by using one-step sputtering from a single quaternary target even without extra Se supply during deposition or post selenization treatment. Structural and electrical properties have been investigated. Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2-x</sub> Se phase was usually observed in the as-deposited samples. However, such second phase could be removed by KCN treatment. Our results showed that the CIGS absorber layer prepared by our one-step sputtering process exhibited columnar structure with (112) preferred orientation and the device revealed an efficiency of 8.01%.
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