Abstract
AbstractThe segregation of phosphorus to grain boundaries in phosphorus implanted Si0.87Ge0.13 films, deposited by chemical vapor deposition (CVD), was directly observed by scanning transmission electron microscopy (STEM) with energy dispersive x-ray (EDX) microanalysis. The segregation was determined to be a thermal equilibrium process by measuring and comparing the average phosphorus concentrations at the grain boundaries in Si0.87Ge0.13 films subjected to 700, 750 or 800°C annealing, following the implantation and 1000°C annealing processes. The measured segregation energy was 0.28 eV/atom. No Ge segregation was found at grain boundaries in phosphorus implanted Si0.87Ge0.13 films by STEM x-ray microanalysis. Neither was evidence shown by STEM microanalysis that Ge segregated to grain boundaries in intrinsic Si1-xGex films with x = 0.02, 0.13 and 0.31. Secondary ion mass spectrometry (SIMS) analysis showed that these intrinsic Si1-xGex films contained 1019 to 4 × 1019/cm-3H, depending on the deposition temperature.
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