Abstract
Using a large-scale array test circuit, both static characteristics and random telegraph noise (RTN) of in-pixel source follower equivalent transistors of a CMOS image sensor with buried and surface channel transistor structures were statistically evaluated under various current and body bias conditions. The distribution of noise intensities at various operational bias conditions, correlations between RTN amplitude and static characteristics were analyzed. It was found that the RTN amplitude has a positive correlation between the subthreshold swing for both types of transistors.
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