Abstract
We study the variability of microdose effects induced by heavy-ion strikes on FinFETs. We model the effects through a statistical analysis, which considers the three-dimensional nature of these devices and overlapping ion hits. The analysis carried out in this work is based on a large amount of experimental data and on the reliability distribution functions (Poisson area scaling, LogNormal distribution, Weibull distribution, etc.), commonly used to estimate the time and charge to breakdown for accelerated lifetime tests.
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