Abstract
A novel scalable and stackable nonvolatile memory technology suitable for building fast and dense memory devices is discussed. The memory cell is built by layering a storage element and a selector. The storage element is a Phase Change Memory (PCM) cell and the selector is an Ovonic Threshold Switch (OTS). The vertically integrated memory cell of one PCM and one OTS (PCMS) is embedded in a true cross point array. Arrays are stacked on top of CMOS circuits for decoding, sensing and logic functions. A RESET speed of 9 nsec and endurance of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cycles are achieved. One volt of dynamic range delineating SET vs. RESET is also demonstrated.
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