Abstract
By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region (centred at about 12 μm). After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8μm to 12μm (centred at 10μm) within wide incidence angles (about 50°), is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor.
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