Abstract
Abstract A new SPICE-compatible model for a gate/body-tied PMOSFET photodetector (GBT PD) with an overlapping control gate is pre-sented. The proposed SPICE-compatible model of a GBT PD with an overlapping control gate makes it possible to control the photo-current. Research into GBT PD modeling was proposed previously. However, the analysis and simulation of GBT PDs is not lacking.This SPICE model concurs with the measurement results, and it is simpler than previous models. The general GBT PD model is a hy briddevice composed of a MOSFET, a lateral bipolar junction transistor (BJT), and a vertical BJT. Conventional SPICE models are basedon complete depletion approximation, which is more applicable to reverse-biased p-n junctions; therefore, they are not appropriate forsimulating circuits that are implemented with a GBT PD with an overlapping control gate. The GBT PD with an overlapping controlgate can control the sensitivity of the photodetector. The proposed sensor is fabricated using a 0.35µm two-poly, four-metal standardcomplementary MOS (CMOS) process, and its characteristics are evaluated.Keywords: High-sensitivity, Gate/body-tied photodetector, SPICE model
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