Abstract
A metastable defect in silicon is discussed. The defect appears after irradiation with electrons at room temperature with 2 MeV electrons, and is studied by means of infrared absorption spectroscopy. An absorption spectrum with a lowest no-phonon line at 615.0 meV is associated with a metastable configuration of the defect. This spectrum is initially not observable when the sample is cooled down to temperatures below approximately 65 K. It is created, however, after the sample is irradiated with light below this temperature. The spectrum disappears when the sample is heated in darkness at temperatures exceeding 70 K. It is concluded that the transformation to the infrared-active metastable configuration is induced by a capture or recombination process involving charge carriers. The observation of an isotope shift of the no-phonon line at 615.0 meV confirms that carbon is one of the constituents of the defect.
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