Abstract
This paper evaluates the small- and large-signal characteristics of a single pole double thru (SPDT) RF antenna switch including its insertion loss, isolation and non-linear behavior. It is fabricated on two different types of high resistivity (HR) Silicon-on-Insulator (SOI) substrates: one standard (HR-SOI) and one trap-rich (RFeSI80). Using a special test structure, the contribution of substrate and active devices is separated for both in small- and large-signal. It is shown that by using trap-rich substrate technology, a reduction of more than 17 dB of 2nd harmonic is achieved compared with HR SOI substrate.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
