Abstract
The increasing demand for low voltage/low power portable equipment in the consumer marketplace has created a need for a low voltage/low power flash memory. In portable communication products, sub-1.8 V operation is essential. In view of the chip cost, a NAND-type cell has a big advantage over a NOR-type cell due to its smaller cell size. However, in this paper we show for the first time that the conventional NAND flash memory cannot operate below 2.0 V due to a program disturb issue. To solve this problem, we propose a new programming scheme which drastically reduces the program disturb and realizes highly reliable, high-speed programming, low voltage operation, low power consumption and low cost NAND flash memories.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
