Abstract
A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 × 10−5 mA/cm2 and high ON/OFF current ratio as high as 105.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
