Abstract
A new mechanism of dissolution (etching) and crystal growth is described which involves the vapor, liquid, and solid phases. A liquid alloy zone is situated in this process between the vapor phase and the crystalline substrate material to be etched or grown. The liquid alloy zone is a preferred site for vapor phase etching. Etching occurs when the atom species comprising the substrate is removed from the liquid alloy. Crystal growth is achieved by selective vapor phase etching of the liquid-forming impurity agent. Single holes and arrays of holes have been etched in silicon and germanium crystals. Gold, nickel, or platinum was used as an agent for germanium, and gold or platinum for silicon. Hydrogen chloride or the tetrachlorides of the substrate materials were used as reaction gases.
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