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Abstract
A soft x‐ray standing wave (soft‐XSW) measurement system has been developed for analyzing III–V compound semiconductor surfaces prepared by molecular beam epitaxy (MBE). It consists of a fast entry chamber ( a load‐lock chamber), a transfer chamber, a MBE growth chamber, and an analysis chamber. It is connected to NTT’s synchrotron radiation beam line at the Photon Factory. Samples prepared by MBE can be transferred to the analysis chamber through ultrahigh vacuum. The goniometer in this analysis system was shown to be suitable for soft‐XSW triangulation studies. Both backreflection and angle‐scan soft‐XSW experiments for adsorbate/GaAs(001) systems prepared by MBE were demonstrated.
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