Abstract
The detailed formation of epitaxial CaF 2 layers deposited on the clean Si(111)7×7 surface has been investigated. The aim of the study is to develop techniques for the preparation of epitaxial metal-insulator-semiconductor and semiconductor-insulator-semiconductor multilayer systems. Films ranging in thickness from one to several monolayers were deposited on the clean Si(111)7×7 reconstructed surface, which were annealed at 750°C to form the epitaxial layer. Photoemission using synchrotron radiation was used to study the electronic structure and the chemical nature of the interface, the epitaxial quality of the films was determined by LEED. The core level photemission spectra reveal chemically shifted Si 2p components indicating the bonding of both Ca and F atoms to the Si surface. The valence band discontinuity at the CaF 2/Si interface has been measured as (8.0±0.5) eV. Irradiation of the CaF 2 layer with an intense soft X-ray beam leads to the dissociation of the CaF 2 layer, the valence band photoemission spectra show substantial desorption of fluorine and the formation of a metallic interfacial layer.
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