Abstract
A novel Reverse Conduction Insulated Gate Bipolar Transistor (RC-IGBT) with Lateral Free-Wheeling Diode (FWD) integrated in the Termination is proposed and investigated by simulation, named LDT-RC-IGBT. Firstly, the Equi-Potential Ring (EPR) of the termination acts as an anode and the N-Stopper/N-Collector of the termination acts as the cathode of the anti-parallel built-in diode. The N-Stopper/N-Collector is shorted to the P-Collector, and it also acts as the electric filed stopper in the breakdown state. Secondly, the N-Collector and the P-Collector are designed apart at the surface and bottom, respectively. Thus the short effect of the N-Collector of the conventional RC-IGBT is avoided, and the snapback is completely eliminated. Thirdly, the P-Collector is not replaced by the N-Collector so that the hole injection is much higher than the conventional RC-IGBT, thus the forward voltage drop ( $V_{on}$ ) can be reduced remarkably, which is favorable to the decrease of conducting energy loss. The results show that, the LDT-RC-IGBT not only eliminates the snapback but also reduces $V_{on}$ , it achieves a better trade-off between $V_{on}$ and turn-off loss $E_{off}$ . At the same $V_{on}$ of 1.27 V, the $E_{off}$ of LDT-RC-IGBT is 2.06 mJ/cm2, which is 35.2%, 45.2% and 46.3% lower than that of the conventional RC-IGBT(3.19 mJ/cm2), TPRC-IGBT(3.78 mJ/cm2) and DARC-IGBT(3.85 mJ/cm2), respectively. At the same $E_{off}$ of 3.10 mJ/cm2, the $V_{on}$ of LDT-RC-IGBT is 1.17 V, which is 10% and 15.8% lower than that of the conventional RC-IGBT(1.30 V) and the DARC-IGBT(1.39 V), respectively.
Highlights
The Reverse Conducting Insulated Gate Bipolar Transistor (RC-IGBT) is a promising device by incorporating the IGBT and the Free-Wheeling Diode (FWD) in a monolithic chip, which is widely used in the power converters [1]–[3]
Many advanced and complicated structures have been proposed to solve these issues in recent years [8]–[12], the TPRC-IGBT can suppress the snapback by the introduction of the Trench Oxide Layer (TOL) and P-float layer in the collector [13], but it is very complicated and hard to fabricate
For the conventional RC-IGBT, the FWD is integrated by replacing partial P-Collector with N-Collector in the bottom of the chip, as a result, an obvious snapback is observed due to the short effect of the N-Collector, and the device will change from unipolar to bipolar mode with abrupt current
Summary
The Reverse Conducting Insulated Gate Bipolar Transistor (RC-IGBT) is a promising device by incorporating the IGBT and the FWD in a monolithic chip, which is widely used in the power converters [1]–[3]. The DARC-IGBT can suppress the snapback and decrease the Von by introducing the double anode [14]. It is at the cost of the Breakdown Voltage (BV) and turn-off losses (Eoff ), and it is complicated. W. Chen et al.: Snapback-Free and Low-Loss RC-IGBT With Lateral FWD Integrated in the Terminal Region TABLE 1. The FWDs of the above structures are vertically integrated in the active cell region, and the P-body acts as the anode and the N-Collector acts as the cathode. A novel RC-IGBT with Lateral FWD in the terminal region (LDT-RC-IGBT) is proposed and investigated to eliminate the snapback, and achieve better tradeoff between Von and Eoff. The recombination and generation models including the Auger, Shockley–Read–Hall, and IMPACT.I are adopted, and the bandgap narrowing modeling BGN is selected
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