Abstract
Conventional insulated gate bipolar transistor (IGBT) current sensing and protection techniques usually employ discrete sensors, such as lossy shunt resistors, and may involve accessing the high-voltage collector load of the IGBT. This would normally present difficulties for integration. This paper presents an IGBT gate driver IC with a collector current sensing circuit and an on-chip CPU for local data processing. This IC is prototyped using a TSMC 0.18 μm 40 V BCD Gen-2 process. The collector current sensing technique is based on the unique Miller plateau relationship between the gate current and collector current ( $I_{C}$ and $I_{G}$ ) for a particular gate resistance ( $R_{G}$ ). It allows a cycle-by-cycle measurement of IC during both turn- on and turn- off transients without any extra discrete components. The temperature variation is compensated internally by the on-chip CPU using polynomial curve fitting. This technique only monitors the low-voltage signal at the gate terminal, without the need to handle any high-voltage signal on the collector/load side. Measurements using a double pulse test setup show an accuracy of ±0.5 A over the current ranges of 1–30 A for turn- on and 1–50 A for turn- off from 25 to 75 °C.
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